august 2012 FDT1600N10ALZ n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FDT1600N10ALZ rev. b0 preliminary FDT1600N10ALZ n-channel powertrench ? mosfet 100 v, 5.6 a, 160 m features ? r ds(on) = 121 m at v gs = 10 v, i d = 2.8 a ? r ds(on) = 156 m at v gs = 5 v, i d = 1.8 a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. applications ? dc-dc converters ? synchronous rectification for server/telecom psu ? battery charger ? ac motor drovers and uninterruptible power supplies ? off-line ups g d s d sot-22 3 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter FDT1600N10ALZ units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 c) 5.6 a - continuous (t c = 100 c) 3.5 i dm drain current - pulsed (note 2) 22.4 a e as single pulse avalanche energy (note 3) 9.2 mj dv/dt peak diode recovery dv/dt 6.0 v/ns p d power dissipation (t c = 25 c) (note 1a) 10.42 w - derate above 25 c (note 1b) 0.083 c t j , t stg operating and storage junction temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8?? from case for 5 seconds 300 c r jc thermal resistance, junction to case, max (note 1) 12 c/w r ja thermal resistance, junction to ambient, max (note 1a) 60 device marking device package reel size tape width quantity 16010alz FDT1600N10ALZ sot-223 13 ?? 12 mm 2500 units
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 2 www.fairchildsemi.com electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c - 72 - mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0v - - 1 a v ds = 80 v, t j = 125 c - - 500 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 1.4 - 2.8 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.8 a - 121 160 m v gs = 5 v, i d = 1.8 a - 156 375 m g fs forward transconductance v ds = 10 v, i d = 5.6 a - 10.7 - s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1mhz - 168 225 pf c oss output capacitance - 42 55 pf c rss reverse transfer capacitance - 2 3 pf c oss(er) energy related output capacitance v ds = 50 v, v gs = 0 v - 76 - pf q g(tot) total gate charge at 10v v gs = 10 v v dd = 50 v, i d = 5.6 a (note 5) - 2.9 3.8 nc q g(tot) total gate charge at 5v v gs = 5 v - 1.6 - nc q gs gate to source gate charge - 0.7 - nc q gd gate to drain ?miller? charge - 0.64 - nc esr equivalent series resistance(g-s) f = 1mhz - 2.04 - t d(on) turn-on delay time v dd = 50 v, i d = 5.6 a, v gs = 10 v, r gen = 4.7 (note 5) - 7.4 24.8 ns t r rise time - 2.5 15 ns t d(off) turn-off delay time - 13.5 37 ns t f turn-off fall time - 2.4 14.8 ns i s maximum continous drain to source diode forward current - - 5.6 a i sm maximum pulsed drain to source diode forward current - - 22.4 a v sd source to drain diode forward voltage v gs = 0 v, i sd = 5.6a - - 1.3 v t rr reverse recovery time v gs = 0 v, i sd = 5.6a, v dd = 50v, di f /dt = 100a/ s - 34.1 46 ns q rr reverse recovery charge - 32.7 20 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. starting t j = 25 c, l = 3 mh, i as = 2.47 a 4. i sd 5.6a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 5. essentially independent of operating temperature typical characteristics 60 c/w when mounted on a 1 in 2 pad of 2 oz copper a) 118 c/w when mounted on a minimum pad of 2 oz copper b)
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 3 www.fairchildsemi.com typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v 2345678910 0.1 1 10 30 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 4 8 12 16 20 0 100 200 300 400 500 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.40.60.81.01.21.4 0.1 1 10 20 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 1 10 100 300 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 *note: i d = 5.6a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 4 www.fairchildsemi.com typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 0.92 0.96 1.00 1.04 1.08 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.3 0.6 0.9 1.2 1.5 1.8 2.1 *notes: 1. v gs = 10v 2. i d = 2.8a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 0.01 0.1 1 10 30 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 1 2 3 4 5 6 v gs = 5v i d , drain current [a] t c , case temperature [ o c] v gs = 10v r jc = 12 o c/w 0 20406080100 0 0.05 0.10 0.15 0.20 0.25 e oss , [ j] v ds , drain to source voltage [v] 0.01 0.1 1 1 2 3 t j = 25 o c t j = 125 o c i as , avalanche current [a] t av , time in avalanche [ms]
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 5 www.fairchildsemi.com typical performance characteristics (continued) figure 13 . transient thermal response curve 0.01 0.1 1 10 100 1000 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z ja (t) = 118 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z ja ] rectangular pulse duration [sec] t 1 p dm t 2
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 6 www.fairchildsemi.com gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms g s d g s d
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 7 www.fairchildsemi.com peak diode recovery dv/d t test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDT1600N10ALZ n-channel powertrench ? mosfet FDT1600N10ALZ rev.b0 8 www.fairchildsemi.com mechanical dimensions sot-223 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1.60 0.20 (0.46) (0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10 +0.10 ?.05 0.06 +0.04 ?.02
FDT1600N10ALZ n-channel powertrench ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devic es or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any compone nt of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? tm ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for produc t development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; suppl ementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification n eeded full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit pa rts experience many probl ems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is ta king strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts . fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality sta ndards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product informat ion. fairchild and our authorized distri butors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ? FDT1600N10ALZ rev.b0 9 www.fairchildsemi.com
|
